3rd International Indium Nitride Workshop

Program Schedule

http://lec.iiiv.cornell.edu/meetings/brazil06/

 

 
 


 

 

 

 

 

 

 

Sunday, November 12th, 2006

Please join us for the Welcoming Reception on Sunday evening, November 12th from 7:00 to 9:00 p.m.  Spouses and guests are welcome!

 

Monday, November 13th, 2006

Breakfast:  7:00 – 8:15 a.m.

8:15 a.m. Welcome & Orientation –  Jose Fernando Chubaci, Scott Butcher, Bill Schaff

8:25 a.m.  General Announcements
Session 1: Electronic and Optical Properties       Chair:  Tom Myers

8:30 a.m. – 8:50 a.m.

Clovis Caetano: Electronic and thermodynamic properties of wurtzite and zinc-blende InGaN alloys in the whole range of composition

8:50 a.m. - 9:10 a.m.

Vanya Darakchieva: Gamma-point electron effective mass in InN

9:10 a.m. - 9:30 a.m.

Takashi Inushima: Electronic Structure of InN Observed by Magnetoresistance

9:30 a.m. – 9:50 a.m.

Dimiter Alexandrov: InN materials properties experimental and theoretical – Bandgap AND Dielectric constant and index of refraction

9:50 a.m. – 10:20: Break

10:20 a.m. – 10:40 a.m.

Antonio Ferreira de Silva: Electronic Properties of Indium Nitride

10:40 a.m. – 11:00 a.m.

Marcelo Marques: Theoretical study of  InN/(MnInN) heterostructures

Session 2: Surface electron accumulation            Chair:  Wladek Walukiewicz

 

11:00 a.m. – 11:20 a.m.

Tim Veal: Surface electronic properties of InN and In-rich InGaN

11:20 a.m. – 11:40 a.m.

Volker Cimalla: Surface properties and terahertz emission from InN

11:40 a.m. – 1:30 p.m.:  Lunch    

1:30 p.m. – 1:50 p.m.

Scott Butcher: A Stoichiometry Related Explanation of Surface Accumulation for InN

1:50 p.m. – 2:10 p.m.

Ingrid Wilke: Terahertz frequency properties of InN

 

Session 3: Mg and Mn doping and alloys      Chair:  Tim Veal

2:10 p.m. – 2:30 p.m.

Tom Myers: Variable Field Hall Analysis

2:30 p.m. – 2:50 p.m.

Wladek Walukiewicz: Evidence for p-type doping of InN

2:50 p.m. – 3:20 p.m. Break

 

3:20 p.m. – 3:40 p.m.

Bill Schaff: p-doping of InGaN

4:00 p.m. – 4:20 p.m.

Masahiro Yoshimoto: MBE Growth of InMnN and its annealing characteristics

 

Tuesday, November 14th, 2006

Breakfast:  7:30 – 8:30 a.m. 

Session 4: MBE growth                                  Chair:  Vladimir Dimitriev

8:30 a.m. –  8:50 a.m.

Yasushi Nanishi:  Growth and Properties of InGaN Alloys by RF-MBE

8:50 a.m. – 9:10 a.m.

Alan Doolittle: Anomalies in InN and InGaN Growth by Molecular Beam Epitaxy

9:10 a.m. – 9:30 a.m.

Akihiko Yoshikawa: Fabrication and Characterization of In-Polarity InN-based III-N MQWs Consisting of One-Monolayer and Fractional-Monolayer InN Wells and GaN Barriers

9:30 a.m. – 9:50 a.m.

Katsumi Kishino: High In content InAlN and InN/InAlN MQW nanocolumns on Si grown by RF-MBE

9:50 a.m. – 10:20 a.m.: Break

Group Outing: Local tours for conference participants will be an opportunity for ad-hoc discussions.

Transportation plans will be announced.

 

 

Wednesday, November 15th, 2006

Breakfast:  7:30 a.m. – 8:30 a.m.

Session 5:  Nitride growth techniques          Chair:   Alan Doolittle

8:30 a.m. – 8:50 a.m.

Hiroshi Fujioka: Characteristics of InN Films Grown by PLD

8:50 a.m. – 9:10 a.m.

Karina Carvalho Lopes: InN growth by Ion Beam Assisted Deposition

9:10 a.m. – 9:30 a.m.

Nikolaus Dietz: High-pressure chemical vapor deposition: an enabling technology for the fabrication of In1-xGaxN (x<0.7)-GaN multiple heterostructures

9:30 a.m. – 9:50 a.m.

Vladimir Dimitriev: InN Growth by HVPE

9:50 a.m. – 10:20 a.m.: Break

 

10:20 a.m. – 10:40 a.m.

Olga Kryliouk: InN Nanostructured Materials:Growth and Characterization

10:40 a.m. – 11:00 a.m.

Xiaodong Chen: In-situ direct-write composition lithography of InGaN

 

Session 6: Defects and Devices                 Chair:   Dimiter Alexandrov

 

11:00 a.m. – 11:20 a.m.

Pierrre Ruterana: Quantitative transmission electron microscopy of indium rich heterostructures (InGaN/GaN) & The structural and optical properties of InN layers grown by RF plasma assisted molecular beam epitaxy

11:20 a.m. – 11:40 a.m.

Tatiana Shubina: Time-resolved photoluminescence studies of InGaN:In and InGaN:Au

11:40 a.m. – 1:30 p.m.:  Lunch

1:30 p.m. – 1:50 p.m.

Fernando Ponce: Structure of InN/GaN interfaces

1:50 p.m. – 2:10 p.m..

Petra Specht: Low-temperature InN:The effect of spatial resolution on band transition determination

2:10 p.m. – 2:30 p.m.

Fernando Ponce: Structure of InN/GaN interfaces

2:30 p.m. – 2:50 p.m.

Til Bartel: To be announced

2:50 p.m. – 3:20 p.m.: Break

3:20 p.m. – 3:40 p.m.

Takashi Matsuoka: Possibility of InN in Applications for Optical Communications Systems

Conference Banquet (time to be announced)

 

Thursday, November 16th, 2006 –  Breakfast/Wrap-up

8:30 a.m. – 11:30 a.m.

A wrap-up session open discussion will be held to further explore the Workshop topics.  Open discussion of the future direction of theoretical, experimental and device studies will take place.