2006 Lester Eastman Conference on High Performance Devices


Plenary Session
Selected Electron Device Research Projects at Cornell University Lester F. Eastman and Sandip Tiwari	page 1
Enabling the Future of U.S. Innovation Arden L. Bement Jr.	page 2
Four Decades of Solid State High Performance Devices W. Keith Kennedy	page 3
Terahertz Technology
Terahertz Spectroscopy of Biopolymers in Water: Absorption and Circular Dichroism. Jing Xu, Kevin W. Plaxco, and S. James Allen	page 5
Carbon Nanotube-Based Schottky Diodes for High-Frequency Applications Harish M. Manohara, Eric W. Wong, Erich Schlecht, Robert H. Lin, Brian D. Hunt, and Peter H. Siegel	page 5
Sub-Terahertz Wireless Communications Technologies Tadao Nagatsuma, Akihiko Hirata, Ryoichi Yamaguchi, Hiroyuki Takahashi, Toshihiko Kosugi, Masami Tokumitsu, Koichi Murata, Tomofumi Furuta, and Hiroshi Ito	page 5
Terahertz Transistor Design Based on Ballistic Transport Quentin Diduck, Martin Margala, and Marc Feldman	page 7
Near Field Terahertz Microscopy at Nanometer Scales H. X. Park	page 8
Properties of Silicon-Germanium Terahertz Devices Nathan Sustersic, Sangcheol Kim, Pengcheng Lv, Matthew Coppinger, and James Kolodzey	page 9
HBT Technology
Implanted pedestal-subcollector InP DHBT technology Navin Parthasarathy, Zach Griffith, Mark J.W. Rodwell, Miguel Urteaga, Keisuke Shinohara, and Berinder Brar	page 11
Present Status and Future Directions for SiGe HBT Technology Marwan H. Khater	page 13
SiGe ICs for Gigabit wireless communications Brian Gaucher	page 14
InP DHBT Technology for High Frequency Analog and Digital ICs Miguel E. Urteaga, R. Pierson, P. Rowell, K. Shinohara, and B. Brar	page 15
GaN HEMTs
GaN Based Amplifiers, an Overview Harry L. Dietrich	page 16
Wide-bandgap Semiconductor devices for Automobile Applications Masahiro Sugimoto	page 17
A GaN on SiC HFET Device Technology for Wireless Infrastructure Applications Bruce M. Green, Haldane S. Henry, Karen E. Moore, Jamal Abdou, Monte G. Miller, and Charles E. Weitzel	page 19
Above 2 A/mm drain current density of GaN HEMTs grown on Sapphire Medjdoub Farid, Carlin Jean Francois, Gonschorek Marcus, Feltin Eric, Py Marcel, Grandjean Nicolas, and Kohn Erhard	page 21
Simulations of gate-recessed and field-plated AlGaN-GaN heterojunction field-effect transistors Valentin O. Turin, Dmitry B. Veksler, and Michael S. Shur	page 23
N-face High Electron Mobility Transistors with a GaN spacer Man Hoi Wong, Siddharth Rajan, Rongming Chu, Tomas Palacios, Chang-Soo Suh, Lee S. McCarthy, Stacia Keller, James S. Speck, and Umesh K. Mishra	page 32
Multifunctional Materials and Devices
Oxides – Semiconductor Heterostructures for Smart Devices jasprit singh	page 34
Super MEMs Using Multifunctional Oxides Chang-Beom X. Eom	page 35
Field Effect in Correlated Electron Systems Charles X. Ahn	page 36
Tunneling across a multiferroic barrier Martin Gajek	page 37
Advanced Concepts
Monitoring of Biochemical Processes with Group III-Nitride Devices Martin Eickhoff	page 38
A Mixed-Signal Row/Column Architecture for Very Large Monolithic mm-Wave Phased Arrays Corrado Carta, Munkyo Seo, and Mark Rodwell	page 39
Ballistic Electron Acceleration Negative-Differential-Conductivity Devices Barbaros Aslan, Xiaodong Chen, William J. Schaff, Lester F. Eastman, Ho Young Cha, Angela Dyson, and Brian K. Ridley	page 41
Photonics
Hybrid Nanomaterials for Multi-spectral Infrared Photodetection Adrienne D. Stiff-Roberts	page 43
New Concepts for Light Emitters and Photodetectors Using Nanocrystal Quantum Dots Victor I. Klimov	page 45
Modeling of high performance SiGeC/Si near-IR photonic devices Martin F. Schubert and Farhan Rana	page 46
Polarization-Sensitive Photodetectors based on Electric-Field-Aligned Semiconductor Nanowires Amol Singh, Vladimir Protasenko, Ronghui Zhou, Hsueh Chia Chang, Masaru Kuno, Huili Xing, and Debdeep Jena	page 48
Ultrafast All-optical Switches Based on Intersubband Transitions in GaN/AlN Multiple Quantum Wells Jahan M. Dawlaty, Farhan Rana, and William J. Schaff	page 50
Visible and UV LEDs
Understanding Ultraviolet Emitter Performance Using Intensity-Dependent, Time-Resolved Photoluminescence Michael Wraback, G. Garrett, A. Sampath, and H. Shen	page 52
Conductive Al-rich AlGaN Alloys for Deep UV Photonics H. X. Jiang	page 53
AlGaN UV light-emitting diodes emitting at 340 nm grown on AlN bulk substrates Yangang Andrew Xi, Thomas Gessmann, Kaixuan Chen, Xiaolu Li, JongKyu Kim, E. Fred Schubert, Wayne Liu, Joseph A. Smart, and Leo J. Schowalter	page 54
Progress in the Development of Quantum-Dot based Light-Emitting Diodes Jennifer Pagan, Philip Barletta, Kinnari Patel, Casey Burkhart, Edward Stokes, Debdeep Jena, and Mark O'Steen	page 56
A new phosphor material: GaN powder doped with rare earth Huaqiang Wu, Junxia Shi, Carl B. Poitras, Michal Lipson, Francis J. DiSalvo, and Michael G. Spencer	page 57
Thin Film Transistors
Oxide Semiconductor Technology for Large-Area Electronics on Plastic Peter F. Carcia	page 58
Vapor and Solution Deposited Organic Thin Film Transistors Thomas N. Jackson	page 59
Nanocrystalline Silicon Thin Film Transistors Arokia Nathan, Andrei Sazanov, Czang-Ho Lee, and John Robertson	page 60
4H-SiC Vertical RESURF Schottky Rectifiers and MOSFETs Yi Wang, Peter Almern Losee, and T. Paul Chow	page 62
Thin film transistor using GaN nano particles Huaqiang Wu, Jie Lu, Junxia Shi, and Michael G. Spencer	page 64
High-K Dielectrics
Charge Trapping and Dielectric Relaxation in Connection with Breakdown of High-k Gate Dielectric Stacks Tao Yuan, Wen Luo, Yue Kuo, Jiang Lu, Jiong Yan, Somenath Chatterjee, Adam Birge, and Way Kuo	page 65
Negative Bias Temperature Instability in TiN/Hf-silicate Based Gate Stacks Durga Misra, Naser A. Chowdhury, and Nilufa Rahim	page 67
Bulk and interfacial defects in High-K gate stack: origin and proprties Gennadi Bersuker, C.S. Park, J. Barnett, P. Lysaght, R. Choi, B.H. Lee, and R. Jammy	page 69
High-k transition metal elemental and complex oxides: engineering options for implementation into nano-CMOS devices Gerry Lucovsky	page 71
High Performance High-k Gate Dielectrics Based on Mixed Oxides Yue Kuo, Jiang Lu, Jiong Yan, Adam Birge, Chen-Han Lin, Somenath Chatterjee, Wen Luo, Tao Yuan, Jun-Yen Tewg, and Way Kuo	page 72
Optimized Short-Channel SiC Power DMOSFETs with Current Spreading Layers for Low On-Resistance James A. Cooper and Asmita Saha	page 74
Novel SiC MOS-Bipolar Switches for >10 kV Applications Ranbir Singh	page 75
High-Yield Silicon Carbide Vertical Junction Field Effect Transistor Manufacturing for RF Applications Victor John-Dimitris Veliadis	page 77
Evidence for two dimensional electron and hole gases in 3C/4H-SiC and 3C/6H-SiC heteropolytype junctions Christopher Ian Thomas, MVS Chandrashakar, and Michael Spencer	page 79
Poster Session
Terahertz sensing of materials Guangchi Xuan, Suddha Ghosh, Sangcheol Kim, Pengcheng Lv, Takashi Buma, and James Kolodzey	page 80
CF4 plasma treatment toward GaN transistor applications Rongming Chu, Chang Soo Suh, Man Hoi Wong, Eric Snow, Nicholas Fichtenbaum, David Brown, Lee McCarthy, Stacia Keller, Feng Wu, James Speck, and Umesh Mishra	page 82
Drift velocity limitation in GaN HEMT channels Arvydas Matulionis	page 83
High Breakdown Voltage GaN HFETs on Sapphire Substrate Young Chul Choi, Milan Pophristic, Boris Peres, Michael G. Spencer, and Lester F. Eastman	page 84
Ohmic contact on GaN HEMTs Yunju Sun and Lester F. Eastman	page 86
Realisation of a Novel GaN/ InN Heterostructure FET Device D. Alexandrov, R. Perks, K. S.A. Butcher, H. Hirshy, J. Kettle, and M. Wintrebert-Fouquet	page 95
DC characteristics of as-grown AlGaAs/GaAs HBTs and AlGaAs/GaAs/GaN HBTs by direct wafer fusion Chuanxin Lian, Huili (Grace) Xing, Chad Wang, Lee McCarthy, and Dave Brown	page 97
Photocapacitance of selectively doped AlGaAs/GaAs heterostructures containing deep traps Nikolai B. Gorev, Inna F. Kodzhespirova, Evgeny N. Privalov, Nina Khuchua, Levan Khvedelidze, and Michael S. Shur	page 99
Low-Loss RF Filter Using MEMS Capacitance Switches Robert Miles Young	page 101
Temperature-Dependent Microwave Performance of Sb-Heterostructure Backward Diodes for Millimeter-Wave Detection Ning Su, Ze Zhang, H. P. Moyer, R. D. Rajavel, Joel N. Schulman, and Patrick Fay	page 103
Field and Thermionic-Field Transport at GaAs/AlGaAs/GaAs Heterojunction Barriers David Vernon Morgan	page 105
Focused thermal beam direct patterning on InGaN during molecular beam epitaxy growth Xiaodong Chen, William Schaff, and Lester Eastman	page 106
Non-Volatile High speed & Low power Charge Trapping Devices Moon Kyung Kim, Soo Doo Chae, Chungwoo Kim, and Sandip Tiwari	page 107
A Comparison of N+ type and P+ type Polysilicon Gate in High Speed Non-Volatible Memories Moon Kyung Kim, Soo Doo Chae, Chungwoo Kim, and Sandip Tiwari	page 109
Accumulated Body MOSFET with Extreme Electrostatic Threshold Voltage Tunability Ali G. Gokirmak and Sandip Tiwari	page 111
Power Adaptive Control on Dense Configured Super-Self-Aligned Back-Gate Planar Transistors Hao Lin, Haitao Liu, Arvind Kumar, Uygar Avci, Jay S. Van Delden, Sandip Tiwari, and Arvind Kumar	page 113
Geometry and Short Channel Effects of Enhancement-Mode n-Channel GaN MOSFETs on p and n- GaN/Sapphire Substrates Weixiao Huang, Tahir Khan, and T. Paul Chow	page 115
Optical Properties of GaInN/GaN Multi-Quantum Well Structure Grown by Metalorganic Vapor Phase Epitaxy Jayantha Senawiratne, Mingwei zhu, Wei Zhao, Yong Xia, Yufeng Li, Theeradetch Detchprohm, and Christian Wetzel	page 117
4H SiC Betavoltaic Cell For Low Power Applications MVS Chandrashekhar, Michael Spencer, and Amit Lal	page 119
Self-induced surface texturing of Al2O3 by means of Inductively Coupled Plasma Reactive Ion Etching in Cl2 chemistry Paolo Batoni, Trushant K. Shah, Dave M. Hodge, Thomas J. Suleski, and Edward B. Stokes	page 121
GaAs-based bipolar cascade lasers with deep quantum well tunnel junctions Arkadiy Lyakh and Peter Zory	page 122
Extremely high quality AlN grown on (0001) sapphire by using metal-organic vapor-phase epitaxy Kaixuan Chen, Yangang Xi, Frank Mont, Xiaolu Li, Jongkyu Kim, E. Fred Schubert, Wayne Liu, and Joseph Smart	page 123
Spatial Spectral Analysis in High Brightness GaInN/GaN Light Emitting Diodes Theeradetch Detchprohm, Yong Xia, Jayantha Senawiratne, Yufeng Li, Mingwei Zhu, Wei Zhao, Yangang Xi, E. Fred Schubert, and Christian Wetzel	page 123
Temperature dependence of the quantum efficiency in green GaInN/GaN light emitting diodes Yufeng Li, Wei Zhao, Yong Xia, Mingwei Zhu, Jayantha Senawiratne, Theeradetch Detchprohm, and Christian Wetzel	page 124
Highly efficient package configurations for white-light-emitting diode lamps Hong Luo, Jong Kyu Kim, E. Fred Schubert, Jaehee Cho, Cheolsoo Sone, and Yongjo Park	page 125
Electrical Characteristics and Carrier Lifetime Measurements Peter A. Losee, Ravi J. Kumar, Tat-sing P. Chow, and Ronald J. Gutmann	page 128
SiC MESFET Based MMIC Technology Mattias Sudow, Kristoffer Andersson, Per-Ake Nilsson, Herbert Zirath, and Niklas Rorsman	page 130

Conference Sponsors


IEEE	ONR	DARPA	AFOSR	Northrop Grumman	Cornell Engineering
Electron Devices Society is a technical co-sponsor	The Office of Naval Research - celebrating 60 years of research	The Defense Advanced Research Projects Agency	The Air Force Office of Scientific Research	Northrop Grumman Corporation	Cornell University College of Engineering